发明名称 Semiconductor component for generation of optical radiation
摘要 A semiconductor component for electrical generation of optical radiation, for example an LED, is provided. The component includes a semiconductor body that contains a first region of material of a first conductivity, a second region of material of a second conductivity type adjacent to the first region; and a PN junction between these regions. The first region has a central part of a material with a first band gap and a peripheral part laterally surrounding the central part of the first region. The material of the peripheral part has a band gap larger than the bang gap of the central part of the first region. The material of the second region has a larger band gap than the band gap of the central part of the first region.
申请公布号 US4644379(A) 申请公布日期 1987.02.17
申请号 US19840677952 申请日期 1984.12.04
申请人 ASEA AKTIEBOLAG 发明人 HIDMAN, TOMAS;OVREN, CHRISTER
分类号 H01L33/00;H01L33/20;(IPC1-7):H01L33/00;H01S3/19 主分类号 H01L33/00
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