发明名称 |
Semiconductor component for generation of optical radiation |
摘要 |
A semiconductor component for electrical generation of optical radiation, for example an LED, is provided. The component includes a semiconductor body that contains a first region of material of a first conductivity, a second region of material of a second conductivity type adjacent to the first region; and a PN junction between these regions. The first region has a central part of a material with a first band gap and a peripheral part laterally surrounding the central part of the first region. The material of the peripheral part has a band gap larger than the bang gap of the central part of the first region. The material of the second region has a larger band gap than the band gap of the central part of the first region.
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申请公布号 |
US4644379(A) |
申请公布日期 |
1987.02.17 |
申请号 |
US19840677952 |
申请日期 |
1984.12.04 |
申请人 |
ASEA AKTIEBOLAG |
发明人 |
HIDMAN, TOMAS;OVREN, CHRISTER |
分类号 |
H01L33/00;H01L33/20;(IPC1-7):H01L33/00;H01S3/19 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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