| 摘要 |
PURPOSE:To enable a high speed operation by connecting the peripheral edge of the second barrier metal electrode provided on the first barrier metal electrode with at least part of a guard ring to reduce a series resistance and an MOS capacity. CONSTITUTION:An N<+> type silicon semiconductor substrate 2, an N-type epitaxial layer 3, a silicon oxide film 4, a ring-shaped P<+> type guard ring 5, a contacting hole 6, the first barrier metal electrode 7, the second barrier metal electrode 8, and Au wirings formed by a wire bonding method substantially at the centers of the electrodes 7, 8 are provided. Since the edge 9 of the electrode 8 is connected with at least part of the ring 5 to connect with the ring 5 formed in the substrate 3 directly without the electrode 7, a series resistance is reduced to decrease an MOS capacity formed of the electrode 8. The film 4 and the substrate 3. |
