| 摘要 |
A process is disclosed for the complete curing of a layer of polyimide in a short time at a low temperature. A solution of polyimide or polyimide precursor having a well-defined viscosity is applied to a substrate to form a layer of predetermined thickness. The substrate and layer are heated in such a manner to cause a continuous increase in temperature of the layer at a predetermined rate to a temperature between about 170 DEG C. and about 225 DEG C. By maintaining a continuous temperature rise during this heating, the total curing of the polyimide layer is accomplished at a temperature less than about 225 DEG C. To determine the optimum rate of temperature rise to cure a given polyimide layer, a similar polyimide layer is formed as a dielectric layer on a ceramic substrate having interdigitated capacitor electrodes formed thereon. The dielectric dissipation factor of the polyimide material is measured dynamically during the curing process. The optimum rate for curing is that rate which causes the dielectric dissipation factor to rapidly drop to near zero without deleterious effects in the polyimide layer.
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