| 摘要 |
PURPOSE:To compose a trench capacitor by forming an oxide film or a nitride film on the inner surface of a groove, and forming a polycrystalline silicon layer in the groove to form a separating region between the elements by a low temperature process, thereby utilizing the separating region. CONSTITUTION:An oxide film or a nitride film 14 is formed by a plasma anodic oxidation method or a nitriding method on a semiconductor substrate 11 which contains the inner surface of a groove 13. A polycrystalline silicon layer 15 is grown by an LPCVD method on the entire surface which contains the groove 13 to completely bury the groove 13 and to flatten the surface. According to this, there is no possibility of causing a deformation in the formation of a separating region, possibility of forming by a low temperature process, and no bird beak in case of forming an element. The narrowing of an element region is eliminated, a separation between the elements in the same separating width can be obtained, and the surface can be flattened. |
