| 摘要 |
PURPOSE:To eliminate the loss of the shape of a semiconductor element by previously forming an insulator between memory cells in a direction along a word line, removing an excess insulator by a photomask, and then forming a capacitor of polycrystalline silicon. CONSTITUTION:After a groove 5A having a groove pattern is formed on a semiconductor substrate 7, a reverse conductive type impurity to the substrate is implanted by an ion implanting method on the bottom of a groove to become at least a capacitor to form an impurity diffused layer 6. Then, after an insulator made of an oxide or a nitride is accumulated on the entire surface, it is etched to allow the insulator 4 to remain only in the groove 5A. Then, with the photomask 11 the insulator 4 in the groove 5B to become a capacitor is removed. The part of the insulator 4 remaining in the groove 5A becomes an insulator separating region between memory cells. Then, a capacity insulating film 8 made of an oxide film is formed on the entire surface. Subsequently, a polycrystalline siliconi is grown, buried in the groove 5B, and then patterned by a plasma etching method to allow the silicon 1 to remain only in the capacitor as capacitor electrodes. |
