| 摘要 |
PURPOSE:To suppress an over-etching, which weakens a coupling ability of a bump electrode to wiring on a semiconductor substrate, by forming multilayered metals, which comprise base metal, barrier metal, and the like piled on the wiring, through resin patterns. CONSTITUTION:An opening part 51 is formed on a surface protection film 4 of Si3N4 on Al wiring 3, coated with a photo resist film 81, and then an opening part 53 is formed on a bump-electrode forming part. Successively, a base metal layer 6 and barrier metal layer 7 are piled in order by beam evaporation or the like, and thereon coated with a photo resist film 82, and then an opening part 52 is formed on the upper position of the opening parts 51 and 53. With the photo resist film 82 serving as mask, a bump electrode 9 is formed by electrolytic plating method or the like. Finally the resist films 81 and 82 are removed by using ordinary resist-removal liquid. In this case, the base metal layer 6 and barrier metal layer 7 are made to be thin and easy to cut at the step part 20 on the opening periphery of the resist 81 so that they are peeled off together with resist 81 and 82. |
