| 摘要 |
PURPOSE:To obtain a semiconductor device which has a semiconductor element and a capacity having large capacity per unit area and a small leakage current by alternately laminating the first dielectric film of at least one type selected from a group consisting of amorphous SiO2, Al2O3, and SiN3N4 and the second dielectric film of at least one type selected from a group consisting of Ta2O5, TiO2, and Nb2O5. CONSTITUTION:An SiO2 film 21 is thinly formed by means such as CVD method, other vapor-phase growing method or thermally oxidizing method on a silicon substrate 1. After Ta is coated by means such as vacuum deposition or vapor- phase growth on the film 21, a Ta2O5 film 31 is formed by thermal oxidation. An SiO2 is coated directly by means such as CVD method, other vapor-phase growing method, or sputtering method on the film 31. Further, a Ta2O5 film 32 is coated by similarly means on an SiO2 film 22. Electrodes 5 are formed by CVD method, depositing method or sputtering method on the film 32. |
