| 摘要 |
PURPOSE:To improve the lifetime of a semiconductor device by a method wherein the sectional area of a bump electrode for a supply voltage, reference voltage of dummy is made larger than that of a bump electrode for signal. CONSTITUTION:A bump electrode 2B is provided at an external terminal 1B for supply voltage, reference voltage or for a redundant circuit or for a dummy having entirely no function. The external terminal 1B can be provided within the allowable region of a semiconductor chip 1 with an area larger than that of an external terminal 1A for the reason that the restriction on layout is looser compared to the external terminal 1A. Accordingly, the bump electrode 2B can be provided with a sectional area larger than that of a bump electrode 2A. By this way, the bump electrode can be prevented from damage, breaking or the like and the lifetime of the semiconductor device is improved. |
