| 摘要 |
PURPOSE:To obtain a light emitting element having electrodes with smooth surfaces by distributing the impurity density of the second layer in low density on the surface side and in high density on the element side to suppress the precipitation of the impurity to the surface. CONSTITUTION:The surface side of an element 1 of compound semiconductor such as GaP having a P-N junction 2 is formed of a liquid-phase epitaxially grown layer. An electrode 3 is formed on the surface side of the first electrode layer 31 which mainly contains gold, the second electrode layer 32 which contains mainly gold and an impurity, formed on the layer 31, and the third electrode layer 33 formed on the layer 32. The layers 31-33 are formed by vacuum depositing method an by emitting an electron beam to an alloyed electrode material prepared in advance. The layer 31 first uses gold which contains an impurity of 0.02% or less. The layer 32 is formed of a high density layer 321 and a low density layer 322 initially of gold-zinc alloy having 4-6% of zinc and then gold-zinc alloy having 1.5-2.5% of zinc. The layer 33 uses 99.99% of gold. |
