| 摘要 |
PURPOSE:To improve an open-circuit voltage significantly by a method wherein an n1-layer is made of amorphous Si and an n2-layer contains fine-crystallized silicon and the thickness of the n1-layer is selected to be not less than 60Angstrom and not more than 400Angstrom . CONSTITUTION:An amorphous silicon solar battery is constituted by junctions composed of a substrate 1, a transparent conductive film 2, a p-layer 3, an i-layer 4 and an n1-layer 5 and an n2-layer 6 and by a metal electrode 7. The n1-layer is produced in a material gas such as silane, disilane or silicon fluoride which contains at least one of nitrogen compound such as ammonia, fluorine compound, carbon compound such as methane, oxygen compound or compound such as nitrogen monoxide or carbon monoxide and is practically in an amorphous condition. The silicon source is diluted by 10-60 times with hydrogen. The n2-layer is fine-crystallized by a conventional method. Moreover, the n1-layer is formed to have the thickness of 60-400Angstrom and the n2-layer is formed to have the thickness of 10-80Angstrom . |
