| 摘要 |
PURPOSE:To prevent temperature rise at the edge of the exposure region of a prescribed pattern on a resist film and to obtain a sharp pattern by forming a silicon carbide layer good in heat conductivity and superior in beam transmittance under an electron beam absorbing film. CONSTITUTION:As a base plate 21, for example, 2-3mm thick quartz or soda lime glass plate is used, on its surface, an electrically conductive film 22 good in light transmittance and samll in electric resistance, such as tin oxide, is vapor deposited, on its surface, the heat conductive film 23, such as the silicon carbide layer, is formed in a thickness of 20-30nm, on its surface, the light absorbing Cr layer 24 is formed, and finally on its surface, the resist film 25 is formed in a thickness of 500-1,000nm. The heat conductive film 23 is formed usually by the sputtering method, using silicon carbide as a target, argon as an atmosphere gas, and a pressure of about 5mmTorr. |
