| 摘要 |
PURPOSE:To discharge energy which enters an input protection circuit from the outside to the outside of the input protection circuit without breakdown of a semiconductor element by providing a switching element between a bonding pad and the semiconductor element connected directly to the bonding pad. CONSTITUTION:An internal circuit 2 is composed of a complementary MIS circuit consisting of an N-type channel MOSFET QN and a P-type channel MOSFET QP. An input protection circuit 9 and a parasitic lateral transistor 10 are provided between a bonding pad 1 and the internal circuit 2. The collector and emitter regions or the source and drain regions of the lateral transistor 10 are composed of semiconductor regions whose impurities are diffused deeper and with higher concentration than those of the source and drain regions of MOSFET's composing the internal circuit 2. With this switching element, energy from the bonding pad 1 is made to flow into the parts other than the semiconductor element so that the breakdown of the semiconductor element can be avoided. |
