发明名称 |
POSITIVE TYPE PHOTORESIST COMPOSITION |
摘要 |
<p>PURPOSE:To form a positive type photoresist composition high in dimensional precision for forming a micropattern by using a mixture of m-cresol and p-cresol in a specified mixing ratio, and a specified proportion of a photosensitizer to the novolak resin. CONSTITUTION:The positive type photoresist composition is composed essentially of 100pts.wt. of the cresol novolak resin A and 25-60pts.wt. of the photosensitizer containing naphthoquinonodiazidosulfonate B as a main component. The cresol novolak resin is composed of the cresol novolak resin obtained from 10-45wt% m-cresol, and 90-55wt% p-cresol. Any composition capable of satisfying both of the photoresist sensitivity and the sectional form of a pattern to be formed cannot be obtained from cresol novolak resins deviated from said ranges of the cresol isomers.</p> |
申请公布号 |
JPS6235349(A) |
申请公布日期 |
1987.02.16 |
申请号 |
JP19850174316 |
申请日期 |
1985.08.09 |
申请人 |
TOKYO OHKA KOGYO CO LTD |
发明人 |
OBARA HIDEKATSU;TANAKA HATSUYUKI;MIYABE MASANORI;ARAI YOSHIAKI;ASAUMI SHINGO;NAKAYAMA TOSHIMASA;YOKOTA AKIRA;NAKANE HISASHI |
分类号 |
G03C1/72;C08G8/08;C08K5/42;C08L61/08;G03F7/022;G03F7/023;G03F7/032;H01L21/027 |
主分类号 |
G03C1/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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