发明名称 MEMORY ELEMENT AND ITS USING METHOD
摘要 <p>PURPOSE:To compensate the error of data written on a mask ROM with a programmable ROM and to facilitate the compensation of a program by building in the mask ROM of large capacity and the programmable ROM of small capacity. CONSTITUTION:A data address from an address input terminal 1 is supplied to a mask ROM2 and a programmable logic array 7, and the output of the array 7 is supplied to a programmable ROM9 through an encoder 8. Also, the output of the ROM2 is outputted to a data output terminal 4 through a gate circuit 3, and also, the output of the ROM9 is outputted to the output terminal 4 through a gate circuit 10. Meanwhile, the output of the array 7 is added on an OR circuit 11 and a write circuit 15 to which a write control signal is inputted, and the address of the erroneous data of the ROM2 is set at the array 7. And conductions of the circuits 5 and 10 are controlled by the output of the OR circuit 11, and the error of the data written on the ROM2 is compensated at the ROM9.</p>
申请公布号 JPS6234399(A) 申请公布日期 1987.02.14
申请号 JP19850173582 申请日期 1985.08.07
申请人 SONY CORP 发明人 SHIMADA KEIICHIRO
分类号 G11C17/00;G06F9/06;G11C16/06;G11C29/00;G11C29/04 主分类号 G11C17/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利