| 摘要 |
PURPOSE:To control the amount of level shifting continuously and accurately, by changing the mixed crystal ratio of a diode for the level shifting, and adjusting a built-in voltage minutely. CONSTITUTION:An input FET Q1 in a level shifting stage, a Schottky barrier diode D for level shifting and an FET Q2 for constant current, whose gate and source are shorted, are connected in series, and the level shifting stage is formed. A load FET Q3, whose gate and source are shorted, and a driving FET Q4 are connected in series. Thus an inverter stage is formed. In the inverter stage, a signal is inputted through an input terminal (a) and outputted from the drain of the FET Q4. In the level shifting stage, the signal is inputted to the gate of the FET Q1 and outputted from an output terminal (b) of an amplifier, which is connected to the drain of the FET Q2 for the constant current. The signal is fed back to the input terminal from the output terminal through a resistor R. Thus, a built-in voltage Vbi of the diode for level shifting, i.e., the amount of the level shifting, is minutely adjusted, and the amplifier can be operated at the optimum operating point. |
