TFT (THIN FILM TRANSISTOR) & METHOD OF MANUFACTURING THE SAME

摘要

forming a central layer in a thickness 5-50=G10-10m in order to protect a silver layer on one side or both sides of oxide layer in the silver layer and two oxide layers; having a single component alloy layer which consists of chrome film, germanium film, silicon film, vanadium film, titanium film, and zirconium film. The method includes the step of forming an triple layers of the oxide layer/silver layer/oxide layer which is a central layer in a thickness 5-50=G10-10m.