| 摘要 |
A contact with a substrate (11) or a conductor situated underneath an opening (14) in an insulating layer (13) is made by depositing a thin film (15) of a refractory metal using a selective vapour-phase forming process so that the metal film (15) forms above the exposed surface and then creeps up the side walls of the insulating layer (13). The electrical contact is made by covering the thin film with a thicker structure of a refractory metal, preferably using a second selective vapour-phase forming process, and then a conducting film is deposited on top of the insulating layer in electrical contact with the thicker metal structure.
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