Ultra-fast MOS device circuits,申请号EP19950308956-传众专利搜索

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发明名称	Ultra-fast MOS device circuits
摘要
申请公布号	EP0720289(A3)	申请公布日期	1997.01.29
申请号	EP19950308956	申请日期	1995.12.11
申请人	AT&T CORP.	发明人	GABARA, THASSEUS J.
分类号	H01L21/8238;H01L27/00;H01L27/092;H03K3/03;H03K3/354;H03K19/0948;(IPC1-7):H03K3/03	主分类号	H01L21/8238
代理机构		代理人
主权项
地址

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