Field effect semiconductor device having improved voltage breakdown characteristics

摘要

A semiconductor device including a field effect transistor of the D-MOS type which is composed of substructures and in which further surface zones are provided in the intermediate spaced between the regularly arranged substructures in order to improve the field distribution in the semiconductor body, as a result of which the breakdown voltage of the transistor is increased. The further surface zones can be provided without additional processing steps being required and need not be contacted at the main surface.