| 摘要 |
PURPOSE:To form wiring with higher reliability without degrading element characteristics by a method wherein the condition at the time of the initial period of growth is set to a specified value when a metal film with higher melting point is embedded with selective vapor phase growth method. CONSTITUTION:An insulative film 13 is formed on a semiconductor substrate 11 where a diffusion layer 12 has been formed. A connection hole 14 corresponding to the diffusion layer 12 is formed on the insulative film 13. A metal film with higher metal film 15 is formed within the connection hole 14 with selective vapor phase growth method. At that time, the process of the selective vapor phase growth for the metal film 15 is set to the condition of the temperature of substrate 500-600 deg.C; the pressure of 0.01-1Torr within the reaction furnace; and the gas separation pressure for the metal compound with higher melting point as a condition of at least at the time of the beginning of the growth. Thus, a wiring with higher reliability is formed without degrading element's characteristics. |
