| 摘要 |
PURPOSE:To obtain an epitaxial wafer by a method wherein an outlet for an epitaxial growth melt is closed when a substrate holder unit is moved in one direction and the melt is introduced from an inlet therefore, while the melt is discharged when the unit is moved in the other direction. CONSTITUTION:A chamber 22 wherein a saturated Ga melt 24 composed of a Ga melt and GaAs, Al and Zn and a slider 23 are held, and a substrate holder unit 25 formed of a board 27 fixing a substrate 26, are provided in a main body 21. The main body 21 is put in a growing furnace and the slider 23 is slided in the direction of an arrow. By this slider 23, a melt outlet 28 provided in the bottom surface of the substrate holder unit 25 is blocked up, and the saturated Ga melt 24 filled up fully in the chamber 22 breaks through its dirty surface film and enters the substrate holder unit through an inlet 29 provided at the side thereof, while the dirty film is left in the chamber 22. |
