| 摘要 |
Process for the purification under plasma of divided silicon, making it possible to obtain bulk silicon of the required purity for photovoltaic or electronic applications. The present invention relates to a process for the purification of divided silicon by melting the said silicon, under a hot plasma obtained by high-frequency excitation of plasma-producing gas, characterised in that, in a first stage, melting of the divided silicon is carried out, the plasma-producing gas consisting of a mixture of 1 to 100 % hydrogen and of 99 % to 0 % argon, and in that in a second stage the molten silicon arising from the first stage is treated with a plasma whose plasma-producing gas consists of a mixture of argon, hydrogen and oxygen, the proportion of oxygen in the mixture being between 0.005 % and 0.05 % and that of hydrogen between 1 and 99.995 %.
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