发明名称 Synthetic double resonant test circuit with simulation of the direct current element
摘要 For development and testing especially of vacuum, intermediate voltage, power switches, because of their very low arc voltage synthetic test circuits according to the current superpositioning principle are available, in which the high-current circuit is built as an oscillating circuit with a correspondingly low drive voltage. However, in a resonant circuit without special measures no direct current element occurs, which is required for the formation of even a symmetrical test currents. Consequently such a direct current component as established, for example, by VDE regulation VDE 0670, Part 102/2.82, is generated in an additional circuit and superimposed on the purely sinusoidal current in the high-current resonant circuit. A capacitor battery with a damping resistor is recommended as a means for generating this direct current element. The previously common simulation of the asymmetric short circuit interrupting current to be tested by an increased sinusoidal current semioscillation in the high-current resonant circuit of synthetic double resonant test circuits gives a considerable excess stress on the specimen, so that an exact testing with the proposed test circuit supplement is worthwhile.
申请公布号 DE3633804(A1) 申请公布日期 1987.02.05
申请号 DE19863633804 申请日期 1986.09.30
申请人 SLAMECKA,ERNST,PROF.DR.TECHN.HABIL. 发明人 SLAMECKA,ERNST,PROF.DR.TECHN.HABIL.
分类号 G01R31/333;(IPC1-7):G01R31/32 主分类号 G01R31/333
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