FIELD EFFECT TRANSISTOR AND METHOD FOR ITS PRODUCTION

摘要

A method of producing a MOSFET comprises the steps of forming a thick insulating layer (11) having an inclined surface surrounding an active region of a semiconouctor substrate (12); forming a thin insulating layer (13) on the active region; forming a gate electrode crossing the thin insulating layer (13) and extending onto the thick insulating layer (11); and forming a source region (S) and a drain region (D) in the active region. The gate electrode forming step comprises forming a conductive layer (14) on the thin insulating layer (13) and thick insulating layer (11); forming a resist layer (15) on the conductive layer (14); selectively exposing the resist layer (15) to a radiation beam to define a gate electrode pattern area (19) of which a portion above the inclined surface and above the end portions of the active region is wider than another portion above the middle portion of the active region; developing the resist layer (15); and selectively etching the conductive layer by using the developed resist layer (21) as a mask.