发明名称 |
HETEROJUNCTION SEMICONDUCTOR DEVICE |
摘要 |
A depletion type element under the category of heterojunction field effect element having an n-region arranged in contact with a two-dimensional electron gas. More specifically a very limited region of the upper surface of the heterojunction faces the bottom surface of a gate electrode, thereby realizing various advantages, e.g.; (1) electron mobility is increased; (2) the resistivity is decreased in the source and drain regions as well as in the regions connecting the source and drain regions and the region facing the gate electrode; (3) the power consumption is decreased; (4) the reproductivity is improved, and (5) the overall reliability is improved. |
申请公布号 |
DE3368816(D1) |
申请公布日期 |
1987.02.05 |
申请号 |
DE19833368816 |
申请日期 |
1983.09.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
ODANI, KOUICHIRO C/O FUJITSU LIMITED;MIMURA, TAKASHI C/O FUJITSU LIMITED |
分类号 |
H01L29/812;H01L21/338;H01L21/8247;H01L27/06;H01L29/10;H01L29/778;H01L29/788;H01L29/792;H01L29/80;(IPC1-7):H01L29/10;H01L27/08 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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