| 摘要 |
PURPOSE:To eliminate the effect of a transition layer and to eliminate the variation in emission wavelength according to the variation in thickness of an active layer, by providing, on a binary compound substrate, a first clad layer of mixed crystals containing the material of the substrate as one component and composed in the proportions closer to the band gap of the substrate and further providing thereon an active layer and a second clad layers having the same components as the first clad layer. CONSTITUTION:On a binary compound substrate 1, a first clad layer 2 of mixed crystals containing the material of the substrate as one component thereof, an active layer 3 of mixed crystals having the same components as the first clad layer 2 and a second clad layer 4 having the same components as the first clad layer 2. The proportions of composition are selected such that the band gap of the first clad layer 2 is between the band gaps of the substrate 1 and of the second clad layer 4 and closer to that of the substrate 1. In this manner, the effect of a transition layer produced in the initial stage of the growth of the active layer 3 at the interface between the active layer 3 and the first clad layer 2 can be decreased. therefore, the band gap of the active layer 3 can be controlled correctly even if the active layer 3 is thin. The emission wavelength and emission spectrum of a light-emitting element and the photoresponse spectrum of a light-receiving element can be controlled correctly. |
