| 摘要 |
<p>Bipolar transistor structures each having three (for example) emitter regions 21 are formed on a substrate of the device. Each transistor structure also has a base region 22, a collector region 23, a collector contact region 24, an isolation region 25 and contact holes 21 min , 22 min , and 23 min . A wiring pattern is established in which, for each transistor structure, either one, two or three (or none) of emitter regions 21 are connected up as necessary to provide a device of a desired kind. …<??>Devices of different kinds are manufactured by forming bipolar transistor structures with three (for example) emitter regions 21 on each of the substrates of the different devices, in accordance with a master slice method using a master pattern common to all the devices. Different wiring patterns are then established for the devices.</p> |
