| 摘要 |
<p>PURPOSE:To obtain a light-shielding film with low conductivity and good shielding ability, by utilizing a black titanium nitride film as an optical film, and by assuring low conductivity and good shielding ability. CONSTITUTION:A thin film transistor which is formed on the one face of a glass cell 1, is comprised of a gate electrode 2 of molybdenum, a gate insulating film 3 such as Si3N4, a semiconductor film 4 such as amorphous silicon, and a source electrode 5 and a drain electrode 6 of metal such as aluminum. On the outer face of the glass wall having the thin film transistor fixed, a black titanium nitride film 7 is formed over an area sufficient for shielding the transis tor. Moreover, the black titanium nitride film 8 may be formed on the internal face of a glass wall not having the thin film transistor thereon, opposing to the transistor.</p> |
