| 摘要 |
PURPOSE:To eliminate the adverse effects caused by heat and to deposit a transparent electrode layer having a high quality, by holding a lower electrode and a substrate having an amorphous semiconductor layer adhered thereon within a reaction chamber in which a vacuum can be held while insulating the lower electrode from the substrate, by introducing a reactive gas containing oxygen, by evaporating a material and by applying a high frequency voltage. CONSTITUTION:A reaction chamber 1 is evacuated to 10<-6>Torr or less. A reactive gas containing oxygen is introduced in the chamber 1 through a supply valve 3 so that the gas pressure is held around 10<-4>Torr. Particles evaporated from an evaporation source 4 and the reactive gas are converted into plasma by the discharge from a high-frequency voltage applied to a high-frequency coil 5, so that a discharge region is provided around the high-frequency coil 5. A lower electrode 23 and a susceptor 6 for holding a substrate 22 having an amorphous semiconductor layer 24 adhered thereon are provided so as to face the evaporation source 4 with the high-frequency coil 5 interposed therebetween and are fixed in the reaction chamber by means of an insulating support 7. The evaporated particles positively combine with the oxygen contained in the reactive gas converted into plasma in the discharge region within the high-frequency coil 5 and the compound is separated out and deposited on the amorphous semiconductor layer 24 of the substrate 22 insulated completely. |
