| 摘要 |
PURPOSE:To enhance the yield of mask production without destroying a pattern support layer by making a window while leaving part of the silicon layer of a silicon support frame; using a blank mask on the frame to form a pattern on the mask; and performing gas plasma etching. CONSTITUTION:Window 7 is made by etching while leaving part of the silicon layer of silicon support frame 2, and gas plasma resistant layer 10 containing a gas plasma resistant material is formed between frame 2 and absorption body pattern support layer 5. Using blank mask 9 having layer 10 pattern 6 is formed on mask 9, and the residual silicon layer between window 7 and layer 10 is removed by dry etching with gas plasma to form mask 1 for X-ray exposure. Thus, the yield of mask production can be enhanced without destroying layer 5 owing to agitation of an etching solution. |
