| 摘要 |
PURPOSE:To obtain a good configurational accuracy for the title resist pattern and high resistivity for etching by a method wherein the prescribed pattern is exposed on a photosensitive resist film, and when a resist pattern is going to be formed by hardening after developing, rinsing and drying work is performed, temperature is raised in a step-like manner. CONSTITUTION:A photosensitive photoresist film is coated on the surface of the silicon wafer to be used for manufacture of an IC, and then exposing, developing, washing and drying processes are performed thereon. The silicon wafer 1, wherein a non-hardened resist pattern is formed, is moved to split type hot plates 301-305, and they are moved to the hot plates in the direction as shown by the arrow in the diagram. If the set temperature is raised as going to the downstream of a semiconductor wafer, the semiconductor wafer 1 is moved to the heated region of relatively high temperature from the heated region of relatively low temperature, and the non-hardened pattern on the surface is heated up to a high temperature gradually and hardened. As a result, the final heating temperature can be raised without deterioration of the pattern form, and the formed resist pattern has sufficient resistivity against a reactive ion etching. |
