Method for growing single crystals of dissociative compound semiconductor.

摘要

A method for growing single crystals of a dissociative compound semiconductor which are pulled in an atmosphere of a gas of a volatile component of the dissociative compound filled in an inner chamber sealed within a growth apparatus is provided wherein the space of the inner chamber is divided into different parts by means of partition wall, which is disposed in the inner chamber and the lower part of which is immersed in a melt contained in a crucible, thereby high quality single crystals with a correct stoichiometric composition can be grown under the constant conditions of temperature and pressure without detrimental effects due to thermal convection in the crystal growth region and the melt. The partition wall may be made either of a monolithic structure or a composite structure capable of being divided into two parts, an upper member and a lower member like a float, the upper part of the lower member is vertically movably inserted into upper member.