发明名称 LCC TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make it possible eliminate gas generating without hermetically sealing by melted glass before the sealing temperature of the glass, and then by melting perfectly the glass to hermetically seal the device, by providing with trenches on the sealing face of the LCC ceramic substrate. CONSTITUTION:On the sealing face 5 of an LCC ceramic substrate 1 which may be sealed by covering a ceramic cap, eight shallow trenches 6 traversing the sealing face are formed. The trenches 6 are formed more shallowly than the upper layer section 1a of the ceramic substrate 1. A ceramic cap 8 is covered onto the case substrate and is sealed by sealing glass 9 to finish. In this way, since there exist trenches on the sealing face of the ceramic substrate, gas generating from the protective film for the semiconductor device in the sealing process can be degassed and thus the internal pressure in the cavity can not enlarged, till the sealing glass is perfectly melted when the ceramic cap is sealed with the sealing glass.
申请公布号 JPS6226845(A) 申请公布日期 1987.02.04
申请号 JP19850166485 申请日期 1985.07.26
申请人 NEC CORP 发明人 KUBOTA SHIGERU
分类号 H01L23/02;H01L23/10;H01L23/13 主分类号 H01L23/02
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