| 发明名称 |
Proximity laser doping technique for electronic materials |
| 摘要 |
This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film transistors.
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| 申请公布号 |
US5871826(A) |
申请公布日期 |
1999.02.16 |
| 申请号 |
US19960655549 |
申请日期 |
1996.05.30 |
| 申请人 |
XEROX CORPORATION |
发明人 |
MEI, PING;LUJAN, RENEA.;BOYCE, JAMES B. |
| 分类号 |
H01L21/20;H01L21/22;H01L21/223;H01L21/225;H01L21/268;H01L21/30;H01L21/336;H01L21/8238;(IPC1-7):B05D3/06 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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