发明名称 Method and device for compensating temperature-dependent characteristic changes in ion-sensitive FET transducer
摘要 An ion activity monitoring device is disclosed, having a semi-conductor device including an ion-sensitive field-effect transistor, for detecting the activity of ions in a liquid medium of interest, and a temperature sensor, for detecting the temperature of the liquid medium of interest, a constant current circuit for supplying a drain current of a particular value to the transistor, and a processing circuit for calculating the concentration of the ions in the liquid medium of interest. The drain current is of a value satisfying the relationship of ¦Id/ beta ¦</=0.10 volt2, wherein Id represents the drain current and beta represents the channel characteristic value of the ion-sensitive field-effect transistor. A method for operating the transistor is also disclosed.
申请公布号 US4641249(A) 申请公布日期 1987.02.03
申请号 US19840622250 申请日期 1984.06.19
申请人 KURARAY CO., LTD. 发明人 GION, HIDENORI;KUBOTA, KENJI;NAKAMURA, MICHIHIRO;YANO, MAKOTO
分类号 G01N27/414;(IPC1-7):G01N27/14;G01N27/46;G06F15/42 主分类号 G01N27/414
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