| 摘要 |
<p>PURPOSE:To simply form a plurality of different elements on the same chip by separately forming a single crystal Si layer and a polycrystalline Si layer by epitaxial grown not considering the selection ratio on the same chip. CONSTITUTION:A masking 6 is formed on a dielectric separating substrate 5 except the prescribed separating island 1a. Then, an epitaxial growth in which a selection ratio is not considered is performed on the entire substrate 5. At this time, a single crystal Si layer 7 is not epitaxially grown on the portion exposed with the island 1a, and a polysilicon layer 8 is grown on the masking 6. Then, the layer 8 formed on the substrate 5 is removed by etching with selective etchants having different etching speeds on the single crystal Si and the polysilicon, and only the layer 7 remains on the substrate 5. Thus, the layer 7 is formed on the prescribed island 1a of the substrate 5, the masking 6 is removed as required to complete a solid state relay material. Thus, a plurality of different elements can be formed on the same chip.</p> |
