| 摘要 |
<p>PURPOSE:To prevent a wire from contacting with a substrate by a method wherein a dicing line of a wafer which separates semiconductor pellets is coated with an insulative film, and the dicing is performed along the insulative film so as to form pellets where the insulative film remains near the surface of the dicing section. CONSTITUTION:After a MOS transistor and bonding pad section 1 have been formed on a silicon wafer 1, a dicing line 13 for separating semiconductor pellets where the surface of the wafer 1 is exposed is formed, and the whole surface is coated with a polyimide film. The polyimide film except for the part near the dicing line 13 is removed, and a polyimide film 19 is left near the dicing line 13. Then, the polyimide film 19 and wafer 1 are diced along the dicing line 13 to manufacture a semiconductor pellet 14'. Then, after the silicon substrate 15 of the semiconductor pellet 14 has been diebonded to the I/O terminal 16 of the circuit, an electrode terminal 17 of the enclosure is connected to the bonding pad section 11 of the pellet 14' with a wire 18, thereby preventing the wire from contacting with the substrate even if the wire sags at the time of the wire bonding.</p> |
