发明名称 INTEGRATED CIRCUIT SUBSTRATE WITH HIGH THERMAL CONDUCTIVITY
摘要 PURPOSE:To obtain an integrated circuit substrate which provides high power output by a method wherein a cavity enclosing only condensible fluid is provided in the substrate along the surface direction and with a predetermined length and a plurality of cuts thin enough to create capillary pressure are formed on the inner surface of the cavity. CONSTITUTION:A groove 2 with a predetermined length is engraved in a material board 1 made of single crystal silicon or the like and its top opening is closed up airtight by a cover plate 3 such as a silicon plate or Pyrex glass plate to form a cavity 4 in the material board 1 along the surface direction with a predetermined length. A plurality of cuts 5 with the widths to the extent of several microns which are thin enough to create capillary pressure are formed on the bottom surface, shown in the figure, of the inner surfaces of the cavity 4 along the longitudinal direction. Further, condensible fluid 6, such as water or alcohol, which are degassed of uncondensible gas such as air, is enclosed in the cavity 4. With this constitution, heat transmission amount in the cavity can be increased and thermal conductivity as a whole substrate can be improved so that high power output of an integrated circuit can be realized.
申请公布号 JPS6224651(A) 申请公布日期 1987.02.02
申请号 JP19850163201 申请日期 1985.07.24
申请人 FUJIKURA LTD 发明人 SUGIHARA SHINICHI;MOCHIZUKI MASATAKA;MASUKO KOICHI;ITO MASAHIKO
分类号 F28D15/02;H01L23/12;H01L23/427 主分类号 F28D15/02
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