| 摘要 |
PURPOSE:To obtain a photoelectric generating element which has a tunnel P-N junction in which doping layers with wide band gaps can be obtained and interface recombination can be suppressed by a method wherein at least parts of the doping layers doped with elements of groups III or V are composed of super lattice structures. CONSTITUTION:At least parts of doping layers doped with elements of groups III or V are composed of super lattice structures. For instance, a fine-crystallized N-type layer, i.e. a doping layer 2 doped with an element of group V, fine-crystallized N-type layers 2a with thicknesses less than 100Angstrom composing a super lattice, amorphous layers 5a with thicknesses less than 100Angstrom composing a super lattice, a fine-crystallized P-type layer, i.e. a doping layer 3 doped with an element of group III, fine-crystallized P-type layers 3a with thicknesses less than 100Angstrom composing a super lattice amorphous layers 6a with thicknesses less than 100Angstrom composing a super lattice are provided between intrinsic amorphous layers 1 and 4, i.e. amorphous layers composed of an element of group IV. With this constitution, interface recombination between the intrinsic amorphous layers and P-N layers can be suppressed and doping layers with large band gaps can be obtained and a multilayer amorphous solar battery with excellent characteristics can be obtained. |
