发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To accomplish a strong electric connection by a method wherein an electric connection between the electrode of a semiconductor pellet and an external terminal is made through a wiring layer formed on an insulative film. CONSTITUTION:After the internal end section of the wiring layer 8 of a film wiring 9 has been placed on an electrode pad 3a, and the external end section has been placed on the internal end section of the metalize 9 of a package substrate 1, a bonding jig is mounted on the polyimide film 7 above the wiring layer 8 so that an electric connection is easily accomplished with thermal pressure or application of ultrasonic vibration energy. Since the wiring layer 8 is lined with the film 7, reinforcement and fixing are accomplished, thereby preventing failures such as cutting due to the resonance with low frequency wave as in the case of wire and short-circuiting due to the wire touching even if the pattern in the wiring layer 8 is to be miniaturized.
申请公布号 JPS6224634(A) 申请公布日期 1987.02.02
申请号 JP19850161959 申请日期 1985.07.24
申请人 HITACHI VLSI ENG CORP;HITACHI LTD 发明人 OKINAGA TAKAYUKI;TATE HIROSHI;MATSUGAMI SHOJI;SHIRAI MASAYUKI;OTSUKA KANJI
分类号 H01L21/60;H01L23/498 主分类号 H01L21/60
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