| 摘要 |
PURPOSE:To form the titled multilayered metallic wiring with excellent reliability and less defectives by a method wherein a metallic film is left on a throughhole selectively etched to be exposed by etching process with equal speed and then coated with the second layer metallic film for patterning process. CONSTITUTION:The first layer aluminium wiring 3 is formed on a thermooxide film 2 on a semiconductor substrate 1 and then a lower interlayer insulating film 5 is vapor grown to be provided with a throughhole by selective etching process. Later, overall surface of the substrate is coated with an aluminium film 6. Firstly a resist film 7 is formed to form an aluminium pattern 6' by dryetching process. Then a PSG film of upper interlayer insulating film 8 is vapor grown. Secondly the PSG film is coated with a photoresist film 9. The film 8 is flatly dry- etched due to the same etching speed of the films 8 and 9. The etching process shall be performed until the surface of the aluminium film 6' is perfectly exposed. Finally the surface is coated with another aluminium film 10 as the second layer for wiring patterning process. |
