| 摘要 |
PURPOSE:To reduce leakage currents between diodes by forming an insulating film on the surface of an epitaxial layer in a semiconductor substrate and bringing at least one of the heating rate or cooling rate of the semiconductor substrate to 160 deg.C/min or more on thermal diffusion treatment for shaping an impurity doping layer. CONSTITUTION:An silicon epitaxial layer 2 is shaped onto a semiconductor substrate 1, an insulating film 3 is formed, and n<+> regions 4 are shaped around sections to which each diode is formed. p-type regions 5 are shaped by implanting B<+> ions into regions formed by using a photolithographic method. The semiconductor substrate 1 is positioned in a nitrogen atmosphere at 1,100 deg.C for 15min. Lifetime killer regions 7 are shaped between the silicon epitaxial layer 2 and the insulating film 3 by bringing the heating rate and cooling rate of the semiconductor substrate 1 to 160 deg.C/min or more, and lastly the unnecessary insulating films 3 are removed and electrodes 6 are formed. |
