发明名称 CORRECTION FOR MASK
摘要 PURPOSE:To enable a high-precision correction on a mask pattern by a method wherein, after a metal complex layer and a resin layer are formed by coating on the mask pattern, a laser beam is directed to the defect part of the mask pattern to enable the complex layer located on the detect part to precipitate the metals being contained therein, and moreover, the resin layer thereon is also insolubilized as well. CONSTITUTION:A mask 1 has a mask pattern 3 which consists of a chrome film and is in the prescribed configuration by coating on the glass substrate 2. When a complex layer 4 consisting of a silver-titanium complex is formed by coating the whole upper surface of the mask 1, the whole upper surface of the mask 1 is coated with the complex layer 4 including a through-hole 5 which is the defect part generating in the mask pattern 3. Then a resin layer 6 is swiftly formed. Laser beam 7 is radiated around the through-hole 5 of the mask pattern 3 from the direction of the resin layer 6. As a result, the silver and titanium, which are contained in the complex layer 4, are respectively precipitated as a metal, a precipitated layer 4a is formed, a chemical reaction is caused in the interior of the resin layer 6 thereon, the resin layer 6 is turned into an insoluble part 6a and the corrected member is formed of both the layer 4a and the insoluble part 6a.
申请公布号 JPS6223111(A) 申请公布日期 1987.01.31
申请号 JP19850161866 申请日期 1985.07.24
申请人 HITACHI LTD 发明人 KOIZUMI YASUHIRO
分类号 G03F1/00;G03F1/72;H01L21/027;H01L21/30 主分类号 G03F1/00
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