发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the disconnection of the wirings by a method wherein a plurality of the wirings are radially provided from the region to be junctioned to the bonding wires and these wirings are mutually conducted under the final insulating film. CONSTITUTION:Wirings 11 of Al and so forth are mutually conducted ranging from a diffusion layer 8 to the bonding region and radial wirings 11b form plural conducting paths quite independent of a circle-shaped wiring 11a. The wirings of Al and so forth which expose at opening parts 12a are each indepen dent only in part of radial wirings 11, so the pellet upper surface parts of which expose at the opening parts 12a is roughened, the bonding force thereof with a resin 14 is increased and water content is hard to intrude into the interior from outside of the semiconductor device. Moreover, as the surface areas of the wirings of Al and so forth are small, corrosion is hard to generate.
申请公布号 JPS6223120(A) 申请公布日期 1987.01.31
申请号 JP19850161849 申请日期 1985.07.24
申请人 HITACHI LTD 发明人 ITAGAKI TATSUO;HARA YUJI;NAKADA KENSUKE
分类号 H01L29/41;H01L21/60;H01L23/482 主分类号 H01L29/41
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