| 摘要 |
PURPOSE:To manufacture a semiconductor so as to form a deep, low-resistance semiconductor region, which is connected to a low resistance region, simply and minutely at a low temperature, by using a conducting material, which is formed in a groove part, as a low resistance current path. CONSTITUTION:On a P-type semiconductor substrate 101, an N-type embedded layer 102 is formed. An N-type epitaxial semiconductor layer 103 is formed on the layer 102. A resist pattern 108 is formed on an Si oxide film 104 that is formed on the surface of the layer 103 by a photo-mask process. With the pattern 108 as a mask, a groove part reaching the embedded layer 102 is formed. Poly Si 109 is deposited on the entire surface to a thickness so that the groove part is buried. Ions such as As are implanted in the poly Si 109 and diffused. An N-type high concentration impurity region 110 is formed. An oxide film 111 is formed on the surface of the poly Si 109A by thermal oxidation. Then, a P-type semiconductor region 112, which is to become a base, an N-type semiconductor region 113, which is to become an emitter, a collector electrode 114A, an emitter electrode 114B, a base electrode 114C and the like are formed. |
