| 摘要 |
PURPOSE:To perform extinguishing readily, without providing an external extinguishing circuit, by providing an extinguishing function, which forcibly cuts off the conducting state into the nonconductive state. CONSTITUTION:An N-type layer 2 is formed on the surface side of a P- conducting type semiconductor substrate 1. An anode electrode 10 and a cathode electrode 11 are provided on the layer 2. A main body S of a thyristor SCR having a PNPN structure 4 is constituted by the electrodes 10 and 11 and a P layer 1a, the N layer 2 a P layer 3 and N layers 6a and 6b, which are located between the electrodes 10 and 11. The main body S is equivalent to a circuit, in which two transistors TRs, T4 and T5 are assembled. An igniting insulating gate electrode 13 is provided on the surface layer of the layer 3 so that a channel can be formed by way of an insulating layer 12. An MOS-FET T1 is formed by the electrode 13 and the layers 2, 3, 6a and 6b. An extinguishing insulating gate electrode 15 is provided between the layers 4 and 7 through the layer 12. An MOS-FET T3 is formed by the electrode 15 and the layers 4, 7 and 2. An extinguishing function is imparted to the SCR using the FET T3. Thus the extinguishing is made easy without providing an external extinguishing circuit. |
