| 摘要 |
<p>Parallel elongated trenches (22) in a silicon substrate (11, 12) are utilized to form multiple distinct memory cell capacitors on each continuous wall (24, 26) of each trench. Chanstops (52) are formed between adjacent capacitors to achieve electrical isolation. A separate word line (64) overlies each trench wall and is connected via respective MOS transistors to the spaced-apart capacitors formed on the wall. A reliable high-density memory characterized by excellent performance is thereby realized.</p> |
