SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PURPOSE:To reduce a leak current, by forming a current blocking layer having a P-N junction, at most part between a graft base and a collector. CONSTITUTION:A base layer 105 comprises InGaAsP are also serves a role of an active layer. A collector layer 102 comprises an N-type InP and electrically connected to a collector electrode 113 through a substrate 101. A P-type InP layer 103 and an N-type InP layer 104 form a current blocking layer. The junction area of a P-type InP graft base 108 and the collector layer 102 is made as small as possible. An N-type InP layer 10 is contacted with the side surface of an N-type InP layer 106. Thus an emitter electrode 111 can be readily formed. A P-type Zn diffused layer is electrically connected to the base 108 and a base 112. In this constitution, the junction area of the layer 108 and the layer 102 can be made small by one figure or more, and a leak current can be made small.