发明名称 DRIVE CIRCUIT OF MOSFET
摘要 PURPOSE:To attain a drive circuit of a power MOSFET of wide dynamic and static control ranges by providing two circuits each of which a transistor TR and a transformer are connected in series and setting the ratio of turn-on of turn-off to 50% at most. CONSTITUTION:When the input of a control pulse 1 is in the low level, a TR 4 is turned off and a TR 3 is turned on, and an FET 1 is turned on by the output of a pulse transformer 16. When the input of a control pulse 2 is in the low level, the FET 1 is turned on similarly because the same circuit consisting of TRs 3 and 4, the pulse transformer 6, a diode 18, etc. is connected in parallel. When control pulses 1 and 2 are in the high level together, TRs 4 are turned on and TRs 3 are turned off in two said circuits, and a TR 2 is turned on to discharge the eletric charge charged in the gate of an FET 1, and the FET 1 is turned off.
申请公布号 JPS6220417(A) 申请公布日期 1987.01.29
申请号 JP19850158206 申请日期 1985.07.19
申请人 HITACHI LTD 发明人 KAGAYA ISAMU
分类号 H03K17/687;H02M3/28;H03K17/691 主分类号 H03K17/687
代理机构 代理人
主权项
地址