| 摘要 |
PURPOSE:To make it possible to control the polarization mode of laser light by one device, by forming an electrooptic crystal layer in contact with an insulating layer, which is deposited on each end surface of a resonator, providing an electrode on said electrooptic crystal layer, and imparting an electric field on the crystal layer. CONSTITUTION:An insulating layer 4 is deposited on at least one end surface 2A or 2B of an undoped InGaAsP active layer 2 on an n-type InP substrate 1, which also serves the role of a clad layer. An electrooptic crystal layer 5 comprising an n-type InP layer is formed in contact with the insulating layer 4. An electrode 6 is provided on the layer 5. An electric field is imparted to the layer 5. Thus, the polarization mode of laser light, which is emitted from the end surface 2A or 2B, can be controlled. In a semiconductor laser, in which the above described polarization mode control part is integrated, the integration density of the optical system can be improved. Adjustment becomes easy. Errors due to deviation in wavelength can be corrected by adjusting a voltage, which is applied across polarization-mode controlling electrodes 6 and 7. |
